In₃GaTe₄ is a ternary semiconductor ceramic composed of indium, gallium, and tellurium, belonging to the family of III-VI compound semiconductors. This material is primarily of research interest for optoelectronic and photovoltaic applications, where its direct bandgap and tunable electronic properties make it relevant to infrared detectors, thermal imaging sensors, and next-generation photovoltaic devices. As a compound semiconductor, In₃GaTe₄ offers potential advantages over binary alternatives in achieving specific wavelength responses and device performance characteristics, though it remains largely in development and exploratory phases rather than widespread commercial production.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.994 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.00700 | eV | DFT · OptB88vdW | ||
| ↳ | 0.1750 | eV | DFT · TBmBJ | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 17.38 | - | DFT · OptB88vdW | ||
| ↳ | 13.87 | - | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 5.840 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00630 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.3162 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data