In3GaTe4

ceramic
· JVASP-111044· In3GaTe4

In₃GaTe₄ is a ternary semiconductor ceramic composed of indium, gallium, and tellurium, belonging to the family of III-VI compound semiconductors. This material is primarily of research interest for optoelectronic and photovoltaic applications, where its direct bandgap and tunable electronic properties make it relevant to infrared detectors, thermal imaging sensors, and next-generation photovoltaic devices. As a compound semiconductor, In₃GaTe₄ offers potential advantages over binary alternatives in achieving specific wavelength responses and device performance characteristics, though it remains largely in development and exploratory phases rather than widespread commercial production.

infrared detectorsoptoelectronic devicesphotovoltaic researchthermal imaging sensorssemiconductor researchcompound semiconductor applications

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65
PropertyValueUnitConditionsSource
Density(ρ)
kg/m³
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Band Gap(Eg)
eV
Magnetic Moment(μB)
µB
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Energy Above Hull(ΔEhull)
eV/atom
Formation Energy(ΔHf)
eV/atom
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.