In3 Ga1

semiconductor

· In3 Ga1

In₃Ga₁ is a III-V semiconductor compound composed of indium and gallium, representing a specific composition within the InGa alloy family used for optoelectronic and high-frequency devices. This material is primarily employed in infrared emitters, photodetectors, and heterojunction devices where its bandgap energy and lattice properties enable efficient light emission or detection in the near-infrared spectrum. Compared to pure indium phosphide or gallium arsenide, indium-gallium compositions offer tunable bandgap and lattice constant, making them valuable for monolithic integrated circuits and quantum well structures in telecommunications and sensing applications.

infrared LEDs and lasersoptical communicationsphotodetectorsheterojunction deviceshigh-frequency integrated circuitsquantum well structures

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000500	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.04000	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In3 Ga1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control