In2SiAg2Se6 — Properties & Data | MatWorld

In2SiAg2Se6

metal

· JVASP-51607· In2SiAg2Se6

In2SiAg2Se6 is a ternary intermetallic compound combining indium, silver, silicon, and selenium, belonging to the family of chalcogenide-based semiconductors and thermoelectric materials. This is primarily a research-stage compound studied for its potential in thermoelectric energy conversion and optoelectronic applications, where the combination of heavy elements (Ag, In) with selenide chemistry can enable efficient phonon scattering and carrier transport. Engineers would consider this material for solid-state cooling, waste heat recovery, or infrared detection systems where layered crystal structures and mixed-valence chemistry offer advantages over conventional binary semiconductors.

thermoelectric energy conversionwaste heat recoveryinfrared photodetectorssemiconductor researchsolid-state cooling devicesoptoelectronic components

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	5.417	kg/m³	DFT · OptB88vdW

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	0.3650	eV	DFT · OptB88vdW
↳	1.492	eV	DFT · TBmBJ
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	9.804	-	DFT · OptB88vdW
↳	6.129	-	DFT · TBmBJ
Electron Effective Mass(m*e)	0.1300	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	0.4133	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.000259	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00101	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-48.27	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	276.5	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	32.41	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.3968	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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In2SiAg2Se6

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