IN2O6 is an indium oxide ceramic compound that belongs to the family of transparent conductive oxides (TCOs) and wide-bandgap semiconductors. It is primarily investigated in research and emerging applications where optical transparency must be combined with electrical conductivity or semiconducting behavior. This material is of particular interest in optoelectronic devices, thin-film applications, and advanced ceramic systems where indium oxides offer advantages over conventional alternatives like ITO (indium tin oxide) in specific performance windows or cost scenarios.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 19.08 | GPa | — | ||
Poisson's Ratio(ν) | 0.5000 | - | — | ||
Shear Modulus(G) | -14.67 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.165 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.2772 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.04617 | eV/atom | — |