In2O3 — Properties & Data | MatWorld

In2O3

semiconductor

· In2O3

Indium oxide (In₂O₃) is a transparent conducting oxide semiconductor with a wide bandgap, combining electrical conductivity with optical transparency in the visible spectrum. It is widely used in optoelectronic and photovoltaic applications, particularly as a transparent electrode material in liquid crystal displays (LCDs), organic light-emitting diodes (OLEDs), and thin-film solar cells, often alloyed with tin (ITO) to enhance conductivity. Engineers select In₂O₃-based materials when applications require simultaneous light transmission and electrical function, though the material's indium content and cost drive consideration of alternative transparent conducting oxides in cost-sensitive applications.

transparent electrodesLCD and OLED displaysphotovoltaic devicesthin-film solar cellsoptoelectronic sensorsgas sensing applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

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Method

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)2 entries	145.2	GPa	DFT
↳	159.1	GPa	DFT · OptB88vdW
Poisson's Ratio(ν)	0.3200	-	DFT · OptB88vdW
Shear Modulus(G)2 entries	57.62	GPa	DFT
↳	62.43	GPa	DFT · OptB88vdW

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Thermal Conductivity(k)2 entries	9.669	W/(m·K)	Measured · 27°C
↳	9.669	W/(m·K)	Measured

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Property	Value	Unit	Conditions	Source
Density(ρ)	7.026	kg/m³	DFT · OptB88vdW

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Method

Carrier

Property	Value	Unit	Conditions	Source
Band Gap(Eg)4 entries	1.195	eV	DFT · OptB88vdW
↳	2.786	eV	DFT · TBmBJ
↳	2.800	eV	Measured
↳	0.7530	eV	DFT · PBE
Dielectric Constant (Relative Permittivity)(εr)	9.192 range 5.182–13.20median of 2 measurements	-	DFT · PBEsol
High-Frequency Dielectric Constant (ε∞)(ε∞)	5.007	-	DFT · OptB88vdW
Electrical Conductivity(σ)	73.97	S/cm	Measured · 27°C
Electrical Resistivity(ρe)	0.000135	Ω·m	Measured · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Thermoelectric Power Factor(PF)3 entries	0.000345	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00117	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
↳	0.000180	W/(m·K²)	Measured · 27°C
Seebeck Coefficient(S)3 entries	-53.71	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	476	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
↳	-156.1	μV/K	Measured · 27°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	7.430	%	DFT · TBmBJ
Thermoelectric Figure of Merit(zT)	0.00559	-	Measured · 27°C

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Method

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)3 entries	-1.738	eV/atom	DFT
↳	-1.703	eV/atom	DFT · OptB88vdW
↳	-1.913	eV/atom	Measured

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.