In2HgSe4 — Properties & Data | MatWorld

In2HgSe4

Name: In2HgSe4
Brand: MatWorld

semiconductor

· In2HgSe4

In₂HgSe₄ is a quaternary semiconductor compound belonging to the chalcogenide family, combining indium, mercury, and selenium in a specific stoichiometric ratio. This is a research-phase material studied for its electronic and optoelectronic properties, with potential applications in infrared detection and photovoltaic systems where wide bandgap semiconductors offer advantages over traditional binary or ternary compounds. The material's notable feature is its ability to operate in the infrared spectrum, making it potentially valuable for specialized detection and sensing applications where conventional semiconductors are limited.

infrared detectorssemiconductor researchoptoelectronic devicesphotovoltaic systemsspecialized sensing applicationsthin-film electronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	30.56	GPa	DFT · OptB88vdW
Poisson's Ratio(ν)	0.2900	-	DFT · OptB88vdW
Shear Modulus(G)	16.15	GPa	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	6.025	kg/m³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)3 entries	0.6000	eV	Measured
↳	0.5160	eV	DFT · OptB88vdW
↳	1.639	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)2 entries	19.56	-	DFT · OptB88vdW
↳	14.81 range 12.41–17.22median of 2 measurements	-	DFT · PBEsol
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	11.57	-	DFT · OptB88vdW
↳	6.995	-	DFT · TBmBJ
Electron Effective Mass(m*e)	0.1067	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	0.6800	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)2 entries	0.6385	C/m²	DFT · OptB88vdW
↳	0.09611	C/m²	DFT · PBE
Piezoelectric Stress Tensor(eij)	Matrix (redacted)	C/m²	DFT · PBE
Thermoelectric Power Factor(PF)2 entries	0.000214	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00241	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-41.40	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	283.3	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	30.38	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.3951	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In2HgSe4

Mechanical Properties

Physical Properties

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