In₂Te₄Hg₁ is a ternary semiconductor compound combining indium, tellurium, and mercury in a mixed-valence structure. This material belongs to the family of narrow-bandgap semiconductors and is primarily explored in research contexts for infrared detection and sensing applications, where its electronic properties potentially enable sensitive operation in the mid- to far-infrared spectrum. The incorporation of mercury into an indium telluride matrix is unusual and suggests investigation of mercury's role in tuning bandgap energy or improving carrier transport for specialized detector applications where conventional InTe or HgCdTe alternatives may be less suitable.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.5041 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2550 | eV/atom | — |