In₂Sb₄S₈Cl₂ is a mixed-halide chalcogenide semiconductor compound containing indium, antimony, sulfur, and chlorine. This is a research-phase material within the layered chalcogenide family, investigated for its potential in optoelectronic and photovoltaic applications where tunable bandgap and anisotropic transport properties are desirable. The chlorine substitution and mixed-cation structure distinguish it from well-established binary semiconductors, offering opportunities to engineer electronic properties through compositional variation, though industrial production and deployment remain limited.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.543 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5420 | eV/atom | — |