In₂Ca₄N₂ is a ternary nitride semiconductor compound combining indium, calcium, and nitrogen. This material belongs to the family of wide-bandgap semiconductors and is primarily of research interest rather than established commercial production. Potential applications leverage nitride semiconductors' inherent properties for high-power electronics, optoelectronics, and next-generation device architectures, though In₂Ca₄N₂ specifically remains an exploratory compound with limited industrial deployment compared to more developed systems like GaN or InN-based materials.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00270 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8670 | eV/atom | — |