In2 As2

semiconductor

· In2 As2

In₂As₂ is an III-V compound semiconductor composed of indium and arsenic in a 1:1 stoichiometric ratio. This material belongs to the family of binary III-V semiconductors, which are engineered for optoelectronic and high-frequency applications where direct bandgap properties and carrier mobility are critical. In₂As₂ is primarily of research and development interest rather than a widely commercialized compound; it is investigated for potential applications in infrared optoelectronics and high-speed transistors, where indium arsenide-based materials offer superior electron transport properties compared to conventional silicon or gallium arsenide alternatives.

infrared optoelectronics researchhigh-electron-mobility transistors (HEMTs)quantum well heterostructuresmillimeter-wave integrated circuitsexperimental semiconductor devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	49.79	GPa	—
Shear Modulus(G)	24.59	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.5846	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.2020	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In2 As2

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control