In₂Ag₂W₄O₁₆ is a mixed-metal oxide semiconductor compound containing indium, silver, and tungsten in a quaternary oxide lattice structure. This material belongs to the family of complex transition-metal oxides and remains primarily in the research phase, with potential applications in photocatalysis, gas sensing, and solid-state electronics where the combination of noble metal (silver) and heavy transition metals (tungsten, indium) provides tunable band structure and catalytic activity. Interest in this compound centers on leveraging silver's antimicrobial and conductive properties alongside tungsten oxide's photocatalytic behavior and indium's semiconductor characteristics for next-generation functional materials.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.892 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.005 | eV/atom | — |