In1Sb0.4As0.6

semiconductor

· In1Sb0.4As0.6

In₁Sb₀.₄As₀.₆ is a ternary III-V semiconductor alloy combining indium, antimony, and arsenic in a zinc-blende crystal structure. This material belongs to the InSbAs family and is primarily of research and developmental interest for infrared optoelectronics and high-speed electronics, offering tunable bandgap and lattice parameters between binary end-members InSb and InAs to optimize performance for specific wavelength ranges or device requirements.

infrared detectorsmid-wavelength IR sensorshigh-electron-mobility transistorsquantum well heterostructuresphotovoltaic researchcompound semiconductor research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.1000	eV	—

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Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In1Sb0.4As0.6

Electrical Properties

Regulatory Screening

Environmental

Export Control