In₁Sb₀.₀₁As₀.₉₉ is a narrow-bandgap III-V semiconductor alloy composed primarily of InAs with a small antimony (Sb) substitution on the arsenide sublattice. This material belongs to the InAs-InSb alloy family and is investigated for infrared and optoelectronic applications where precise bandgap engineering is required. The Sb incorporation tunes the electronic and optical properties relative to pure InAs, making it relevant for mid-to-far infrared detectors, thermal imaging systems, and potentially high-mobility transistor channels in specialized RF or low-noise applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1700 | eV | — |