In1Hg4As2.5Br3.5
semiconductor· In1Hg4As2.5Br3.5
In1Hg4As2.5Br3.5 is a mixed-halide perovskite-related semiconductor compound combining indium, mercury, arsenic, and bromine in a complex stoichiometry. This is a research-phase material primarily of interest in theoretical and experimental semiconductor physics, likely explored for tunable bandgap properties or exotic electronic behavior rather than established commercial applications. The material family (mercury-containing halide perovskites and related phases) has attracted academic attention for potential photovoltaic or optoelectronic devices, though environmental and stability concerns limit practical deployment compared to lead-free alternatives.
experimental semiconductorsperovskite researchbandgap engineeringoptoelectronic devices (research)computational materials science
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
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