In11.3Bi14.7S38

semiconductor

· In11.3Bi14.7S38

In11.3Bi14.7S38 is a quaternary chalcogenide semiconductor compound combining indium, bismuth, and sulfur in a fixed stoichiometric ratio. This material belongs to the family of metal sulfide semiconductors and appears to be a research or specialty composition rather than an established commercial alloy, likely explored for thermoelectric, optoelectronic, or solid-state device applications where the combination of heavy elements (Bi, In) and chalcogen (S) can provide favorable band gap engineering and phonon-scattering properties. The specific indium-bismuth-sulfur ratio suggests investigation into phase-stability and electronic structure tuning for niche high-performance applications.

thermoelectric devicessolid-state electronics researchnarrow-gap semiconductorsinfrared optoelectronicsexperimental phase-change materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.450	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In11.3Bi14.7S38

Electrical Properties

Regulatory Screening

Environmental

Export Control