Indium telluride (InTe) is a binary III-VI semiconductor compound combining indium and tellurium, belonging to the narrow-bandgap semiconductor family. It is primarily of research and development interest for infrared optoelectronics, thermoelectric energy conversion, and quantum device applications, where its thermal and electrical properties offer potential advantages over more conventional semiconductors like InSb or InAs in specific temperature and wavelength ranges.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 40.67 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 14.02 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00370 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3130 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data