InSnBr₃ is a halide perovskite semiconductor compound combining indium, tin, and bromine in a 1:1:3 stoichiometric ratio. This material belongs to the emerging class of lead-free halide perovskites, primarily investigated for optoelectronic and photovoltaic applications where toxicity concerns preclude lead-containing perovskites. The tin–indium combination offers potential for tunable bandgap and improved stability compared to pure tin perovskites, making it relevant for research into next-generation solar cells, light-emitting devices, and radiation detectors, though it remains largely in the experimental phase with ongoing optimization for device-level performance and long-term environmental stability.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 18.47 | GPa | — | ||
Shear Modulus(G) | 8.540 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.305 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7290 | eV/atom | — |