In1 Re1 Ge1

semiconductor

· In1 Re1 Ge1

In₁Re₁Ge₁ is an intermetallic compound combining indium, rhenium, and germanium in equiatomic proportions, belonging to the family of ternary semiconducting intermetallics. This material is primarily of research interest rather than established in high-volume industrial production; compounds in this chemical space are explored for potential applications in high-temperature electronics, thermoelectric devices, and advanced semiconductor technologies where the combination of elements might offer unique band structure or thermal properties.

research semiconductorshigh-temperature electronicsthermoelectric materials (experimental)compound semiconductor developmentintermetallic phase studies

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01310	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.6600	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In1 Re1 Ge1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control