InNi is an intermetallic compound combining indium and nickel, representing a research-phase semiconductor material within the broader family of III-V and intermetallic semiconductors. This compound is studied primarily in condensed matter physics and materials research contexts for its electronic and structural properties, rather than as an established commercial material. InNi may be explored for niche applications in thermoelectric devices, optoelectronics research, or advanced device structures where its specific band structure and mechanical characteristics offer potential advantages over conventional alternatives.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 119.7 | GPa | — | ||
Shear Modulus(G) | 40.78 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1508 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.07200 | eV/atom | — |