In1 Hg1 W2 — Properties & Data | MatWorld

In1 Hg1 W2

semiconductor

· In1 Hg1 W2

In₁Hg₁W₂ is an intermetallic compound combining indium, mercury, and tungsten in a 1:1:2 stoichiometry. This is an experimental/research-phase material belonging to the broader class of ternary intermetallics, which are of interest for potential semiconductor, thermoelectric, or specialized electronic applications where unconventional element combinations may yield unique band structures or transport properties.

experimental semiconductorsthermoelectric researchmaterials informatics studiesphase diagram explorationcompound screening (high-throughput)narrow-gap semiconductor development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00750	eV	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.8290	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In1 Hg1 W2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control