In1 Ge3

semiconductor

· In1 Ge3

In1Ge3 is an indium-germanium compound semiconductor belonging to the III-V semiconductor family, characterized by a specific stoichiometric ratio of indium to germanium. This material is primarily of research and development interest for advanced optoelectronic and high-frequency electronic applications, where its bandgap and carrier properties may offer advantages in niche device configurations compared to more established binary compounds like InGe or GaAs.

infrared photodetectorshigh-frequency transistorsquantum well structuresresearch semiconductorsheterojunction devicesspace/radiation-hardened electronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00300	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.3050	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In1 Ge3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control