In1 Fe1 As1

semiconductor

· In1 Fe1 As1

InFeAs is a ternary intermetallic semiconductor compound combining indium, iron, and arsenic. This material belongs to the family of III-V and mixed-metal arsenides, which are primarily investigated in research contexts for optoelectronic and thermoelectric applications where bandgap engineering and carrier transport properties are critical. InFeAs and related compounds are of interest in advanced semiconductor device research, particularly for exploring how iron doping modifies the electronic structure of indium arsenide-based systems.

experimental semiconductorsthermoelectric researchoptoelectronic device developmentnarrow-bandgap materials researchiron-doped arsenide compoundshigh-mobility carrier systems

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	57.30	GPa	—
Shear Modulus(G)	-840.0	MPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01450	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.7320	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In1 Fe1 As1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control