In1 Cu1 O3

semiconductor

· In1 Cu1 O3

In₁Cu₁O₃ is an experimental mixed-metal oxide semiconductor combining indium and copper in a 1:1 stoichiometry. This ternary compound belongs to the family of transparent conducting oxides (TCOs) and potentially multifunctional semiconductors being explored in research contexts for optoelectronic and photocatalytic applications. While not yet widely commercialized, materials in this composition space are of interest as alternatives to conventional TCOs (like ITO) due to the potential for lower cost, improved stability, or enhanced functionality in specific device architectures.

transparent conducting films (research)photocatalytic applicationsthin-film optoelectronicssolar cells (experimental)oxide semiconductor devicescost-effective TCO alternatives

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00670	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.6500	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In1 Cu1 O3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control