In1 As1 Pd5

semiconductor

· In1 As1 Pd5

InAs-Pd is an intermetallic compound combining indium arsenide (a III-V semiconductor) with palladium, representing an experimental material in the semiconductor and quantum materials research space. This compound is primarily of academic and research interest for exploring novel electronic and optoelectronic properties at the intersection of III-V semiconductors and transition metals, with potential applications in nanoscale devices, catalysis, or quantum computing architectures where unconventional band structures and strong spin-orbit coupling could be leveraged.

Quantum device researchExperimental semiconductorsNanoscale electronicsCatalytic materials developmentSpintronics and topological materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01360	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.4440	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In1 As1 Pd5

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control