In1.9Ge0.1O3 is an indium germanium oxide ceramic compound, a mixed-metal oxide belonging to the family of transparent conducting oxides (TCOs) and wide-bandgap semiconductors. This material is primarily of research and developmental interest rather than established industrial production, studied for applications requiring the combined properties of indium oxide and germanium oxide phases. Engineering interest focuses on optoelectronic and electronic applications where the specific composition can tune bandgap, carrier mobility, and optical transparency—offering potential advantages over single-component indium oxide or alternative TCO systems in specialized device architectures.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Thermal Conductivity(k)2 entries | 2.514 | W/(m·K) | — | ||
| ↳ | 2.514 | W/(m·K) | 727°C |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Electrical Conductivity(σ) | 479.2 | S/cm | 727°C | ||
Electrical Resistivity(ρe) | 0.0000209 | Ω·m | 727°C | ||
Thermoelectric Power Factor(PF) | 0.000661 | W/(m·K²) | 727°C | ||
Seebeck Coefficient(S) | -117.4 | μV/K | 727°C | ||
Thermoelectric Figure of Merit(zT) | 0.2629 | - | 727°C |