In1.6Ga0.4Cu1S3.5

semiconductor

· In1.6Ga0.4Cu1S3.5

In1.6Ga0.4Cu1S3.5 is a quaternary semiconductor compound combining indium, gallium, copper, and sulfur in a chalcogenide crystal structure. This material belongs to the I-III-VI semiconductor family and represents an experimental composition designed to optimize optoelectronic and photovoltaic performance through controlled doping and alloying of indium-gallium-copper sulfides.

photovoltaic absorber layersthin-film solar cellsoptoelectronic devicessemiconductor researchlight absorption materialsbandgap engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.550	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In1.6Ga0.4Cu1S3.5

Electrical Properties

Regulatory Screening

Environmental

Export Control