In0.9P0.9Ga0.1As0.1

semiconductor

· In0.9P0.9Ga0.1As0.1

In0.9P0.9Ga0.1As0.1 is a quaternary III-V semiconductor alloy based on indium phosphide (InP) with small gallium and arsenic additions, designed to engineer the bandgap and lattice properties for optoelectronic applications. This material belongs to the indium phosphide family and is primarily of research interest for tuning lattice parameters and optical properties relative to binary InP, making it relevant for high-speed electronics and infrared photonics where precise material engineering is required.

high-speed integrated circuitsinfrared detectors and emitterslattice-matched heterostructuresoptoelectronic researchcompound semiconductor engineeringbandgap engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.320	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.9P0.9Ga0.1As0.1

Electrical Properties

Regulatory Screening

Environmental

Export Control