In0.9As0.9Cd0.1Te0.1

semiconductor

· In0.9As0.9Cd0.1Te0.1

In0.9As0.9Cd0.1Te0.1 is a quaternary III-V semiconductor alloy based on indium arsenide with cadmium and tellurium additions, designed to engineer the bandgap and lattice parameters for infrared applications. This material composition exists primarily in research and development contexts, where it is being explored for infrared photodetectors, thermal imaging sensors, and other IR optoelectronic devices that benefit from bandgap tuning in the mid- to long-wavelength infrared region. The addition of CdTe to the InAs host lattice allows researchers to modify electronic properties while maintaining semiconductor quality, making it relevant for applications requiring custom infrared response compared to binary or ternary alternatives.

infrared photodetectorsthermal imaging sensorsmid-wavelength IR (MWIR) applicationsbandgap engineering researchoptoelectronic device developmentmaterials research & development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6900	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.9As0.9Cd0.1Te0.1

Electrical Properties

Regulatory Screening

Environmental

Export Control