In0.99Ga0.01As0.99P0.01

semiconductor

· In0.99Ga0.01As0.99P0.01

In0.99Ga0.01As0.99P0.01 is a quaternary III-V semiconductor alloy based on indium arsenide with minor gallium and phosphorus additions, designed to achieve lattice-matching and bandgap engineering for specific optoelectronic applications. This material falls within the indium arsenide family but with composition tuning to modify electronic and optical properties relative to binary InAs. It is primarily investigated for infrared detectors, long-wavelength photonic devices, and heterojunction structures where precise lattice constant control is critical for reducing defect density and improving device performance.

infrared photodetectorsquantum well structuresheteroepitaxial layersmid-wave IR imagingoptoelectronic research deviceslattice-engineered semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.3000	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.99Ga0.01As0.99P0.01

Electrical Properties

Regulatory Screening

Environmental

Export Control