In0.99As0.99Ga0.01P0.01

semiconductor

· In0.99As0.99Ga0.01P0.01

In0.99As0.99Ga0.01P0.01 is a quaternary III-V semiconductor compound—a heavily indium-arsenide-based material with minor gallium and phosphorus additions. This is a research-phase material designed to fine-tune the bandgap and lattice properties of InAs for optoelectronic and infrared applications, where the small Ga and P fractions provide band-structure engineering without dramatically altering the host InAs framework. The material belongs to the narrow-gap semiconductor family and is of primary interest for tuning carrier transport and emission wavelengths in infrared detectors, quantum devices, and specialized photonic systems where lattice matching and bandgap precision are critical.

infrared photodetectorsquantum dot engineeringnarrow-gap semiconductorsbandgap tuning applicationsresearch-phase optoelectronicslattice-matched heterostructures

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.3000	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.99As0.99Ga0.01P0.01

Electrical Properties

Regulatory Screening

Environmental

Export Control