In0.99As0.99Cd0.01Te0.01

semiconductor

· In0.99As0.99Cd0.01Te0.01

In0.99As0.99Cd0.01Te0.01 is a quaternary III-V semiconductor alloy based on indium arsenide with cadmium and tellurium dopants, designed to modify the electronic and thermal properties of the InAs host lattice. This is a research-grade compound rather than a commercial material, typically synthesized to engineer bandgap, carrier mobility, or lattice matching for specialized optoelectronic and infrared sensing applications. The cadmium and tellurium additions allow tuning of the material's optical absorption edge and carrier concentration relative to binary InAs, making it relevant for mid-infrared detectors, high-mobility transistor channels, and integrated photonic devices where lattice engineering is critical.

infrared detectorsmid-IR optoelectronicshigh-mobility semiconductorsbandgap engineeringresearch photonicsquantum well heterostructures

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.7600	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.99As0.99Cd0.01Te0.01

Electrical Properties

Regulatory Screening

Environmental

Export Control