In0.98As0.98Cd0.02Te0.02

semiconductor

· In0.98As0.98Cd0.02Te0.02

In0.98As0.98Cd0.02Te0.02 is a quaternary III-V semiconductor alloy based on indium arsenide with small substitutional additions of cadmium and tellurium. This is a research-grade material engineered to fine-tune the bandgap and lattice parameters of InAs for specialized optoelectronic and infrared detector applications. The cadmium and tellurium dopants modify the electronic structure relative to binary InAs, making it potentially valuable for mid-infrared sensing, photodetectors, and heterojunction device engineering where precise bandgap control is critical.

infrared photodetectorsmid-infrared sensingheterojunction devicesquantum well engineeringresearch semiconductorsoptoelectronic materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.7300	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.98As0.98Cd0.02Te0.02

Electrical Properties

Regulatory Screening

Environmental

Export Control