In0.97As0.97Cd0.03Te0.03

semiconductor

· In0.97As0.97Cd0.03Te0.03

In0.97As0.97Cd0.03Te0.03 is a quaternary III-V semiconductor alloy based on indium arsenide with small cadmium and tellurium dopants, designed to engineer bandgap and carrier properties for infrared applications. This material belongs to the family of narrow-bandgap semiconductors used primarily in infrared photodetectors, thermal imaging sensors, and long-wavelength optoelectronic devices where sensitivity in the mid- to far-infrared spectrum is critical. The cadmium and tellurium additions modify electronic structure relative to binary InAs, making this composition relevant for researchers developing high-performance IR detectors and focal plane arrays that require precise spectral tuning and thermal stability.

infrared photodetectorsthermal imaging sensorslong-wavelength optoelectronicsfocal plane arraysbandgap engineeringresearch/development semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.7100	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.97As0.97Cd0.03Te0.03

Electrical Properties

Regulatory Screening

Environmental

Export Control