In0.95As0.95Cd0.05Te0.05

semiconductor

· In0.95As0.95Cd0.05Te0.05

In0.95As0.95Cd0.05Te0.05 is a quaternary III-V semiconductor alloy based on indium arsenide with small cadmium and tellurium additions. This is a research-phase compound designed to engineer the bandgap and lattice properties of InAs for specialized optoelectronic and infrared applications. The cadmium and tellurium dopants modify carrier concentration and band structure, making this material notable for tuning performance in mid-infrared detectors and narrow-bandgap device designs where standard InAs or InSb may not meet requirements.

infrared detectorsmid-IR optoelectronicsnarrow-bandgap semiconductorsquantum well structuresresearch photodetectorstunable bandgap engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6800	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.95As0.95Cd0.05Te0.05

Electrical Properties

Regulatory Screening

Environmental

Export Control