In0.93As0.93Cd0.07Te0.07

semiconductor
· In0.93As0.93Cd0.07Te0.07

In0.93As0.93Cd0.07Te0.07 is a quaternary III-V semiconductor alloy based on indium arsenide with cadmium and tellurium dopants, engineered to modify the electronic bandgap and lattice parameters of the host InAs material. This compound is primarily investigated in research contexts for infrared detection and optoelectronic applications, where the cadmium and tellurium additions allow tuning of the bandgap energy to target specific wavelength ranges in the mid- to far-infrared spectrum. The material represents an alternative to more common ternary systems (like InSb or InAs) when wavelength selectivity or lattice matching to specific substrates is required, though it remains less mature than commercial alternatives and is typically found in specialized defense, scientific instrumentation, and thermal imaging research programs.

infrared detectorsthermal imaging sensorsoptoelectronic researchbandgap engineeringdefense sensing systemswavelength-selective photodetectors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
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eV——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.