In0.8P0.8Ga0.2As0.2

semiconductor

· In0.8P0.8Ga0.2As0.2

In0.8P0.8Ga0.2As0.2 is a quaternary III-V semiconductor alloy combining indium phosphide (InP) and gallium arsenide (GaAs) lattice structures in a specific composition ratio. This material is primarily of research and specialized industrial interest, engineered to achieve lattice-matching or bandgap engineering objectives for high-performance optoelectronic and photovoltaic devices. The quaternary composition offers tunable electronic and optical properties that allow engineers to optimize performance for specific wavelengths or carrier transport requirements in applications where standard binary or ternary semiconductors fall short.

Heterojunction solar cellsHigh-efficiency photovoltaicsInfrared optoelectronicsQuantum well structuresLattice-matched epitaxyResearch-grade semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.400	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.8P0.8Ga0.2As0.2

Electrical Properties

Regulatory Screening

Environmental

Export Control