In0.8Ga0.2As1

semiconductor

· In0.8Ga0.2As1

In0.8Ga0.2As1 is a ternary III–V semiconductor alloy combining indium, gallium, and arsenic, engineered to deliver a bandgap intermediate between InAs and GaAs. This composition is primarily of research and specialized photonic interest, used in high-speed optoelectronic devices, infrared detectors, and quantum well structures where the tuned bandgap enables detection or emission in the near- to mid-infrared spectrum. Engineers select this alloy when lattice-matching constraints and specific optical wavelength requirements cannot be met by binary III–V compounds, though it remains less common in production than its parent materials.

infrared photodetectorshigh-speed optoelectronicsquantum well devicesresearch and developmentlattice-engineered semiconductorsmid-wave IR sensing

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.5000	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.8Ga0.2As1

Electrical Properties

Regulatory Screening

Environmental

Export Control