In0.8Ga0.2As0.8P0.2

semiconductor

· In0.8Ga0.2As0.8P0.2

In0.8Ga0.2As0.8P0.2 is a quaternary III-V semiconductor alloy combining indium, gallium, arsenic, and phosphorus in a lattice-matched structure optimized for optoelectronic devices. This material is primarily used in high-speed photodetectors, infrared emitters, and integrated photonic circuits operating in the near-infrared spectrum, where its direct bandgap and lattice-matching properties to InP substrates enable efficient light emission and detection with minimal defects. Engineers select this alloy when precision spectral control and high quantum efficiency are critical, particularly in telecommunications and fiber-optic sensing applications where composition tuning provides wavelength flexibility unavailable in binary or ternary semiconductors.

infrared photodetectorsfiber-optic communicationshigh-speed optical receiversintegrated photonicsquantum wells and heterostructureswavelength-tunable emitters

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.8500	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.8Ga0.2As0.8P0.2

Electrical Properties

Regulatory Screening

Environmental

Export Control