In0.8As0.8Ga0.2P0.2

semiconductor

· In0.8As0.8Ga0.2P0.2

In0.8As0.8Ga0.2P0.2 is a quaternary III-V semiconductor alloy combining indium arsenide with gallium phosphide, engineered to achieve specific bandgap and lattice properties for optoelectronic applications. This material family is primarily investigated for infrared and near-infrared photonic devices, where the quaternary composition allows tuning of emission wavelength and lattice matching to substrate materials—offering advantages over binary or ternary compounds in applications demanding precise spectral control and reduced defect density.

infrared photodetectorssemiconductor lasersphotovoltaic cellsoptoelectronic integrated circuitsresearch-phase quantum deviceslattice-engineered heterostructures

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.8500	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.8As0.8Ga0.2P0.2

Electrical Properties

Regulatory Screening

Environmental

Export Control