In0.7Ga0.3As0.3P0.7

semiconductor

· In0.7Ga0.3As0.3P0.7

In0.7Ga0.3As0.3P0.7 is a quaternary III-V semiconductor alloy combining indium, gallium, arsenic, and phosphorus, engineered to achieve a lattice match with indium phosphide (InP) substrates while tuning the bandgap for specific optical applications. This material is primarily used in optoelectronic devices operating in the 1.0–1.7 μm infrared wavelength range, particularly for long-wavelength telecommunications and infrared detector applications where its lattice-matched growth on InP enables high-quality epitaxial films. Engineers select this alloy when direct bandgap control and monolithic integration with InP-based device architectures are critical, offering superior performance over binary or ternary semiconductors for high-speed optical communications and sensing systems.

fiber-optic communications (1.3-1.5 μm)infrared photodetectorslaser diodes (long-wavelength)integrated photonicsquantum well structuresresearch/development optoelectronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.580	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.7Ga0.3As0.3P0.7

Electrical Properties

Regulatory Screening

Environmental

Export Control