In0.6Ga0.4As0.6P0.4

semiconductor

· In0.6Ga0.4As0.6P0.4

In0.6Ga0.4As0.6P0.4 is a quaternary III-V semiconductor alloy combining indium, gallium, arsenic, and phosphorus in a lattice-matched configuration to indium phosphide (InP) substrates. This material is engineered for optoelectronic and high-speed electronic applications where bandgap tunability and lattice matching are critical, enabling direct integration onto InP platforms without strain-induced defects.

fiber-optic communications (1.0–1.7 μm wavelengths)high-frequency transistors and integrated circuitsphotodetectors and avalanche photodiodesresearch-grade optoelectronicslattice-matched epitaxial layerslong-wavelength infrared devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.250	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.6Ga0.4As0.6P0.4

Electrical Properties

Regulatory Screening

Environmental

Export Control