In0.6As0.6Ga0.4P0.4

semiconductor

· In0.6As0.6Ga0.4P0.4

In0.6As0.6Ga0.4P0.4 is a quaternary III-V semiconductor alloy combining indium arsenide and gallium phosphide components, engineered to achieve specific bandgap and lattice properties between those of its binary endpoints. This material is primarily investigated in research contexts for optoelectronic and high-frequency electronic devices, where the tunable bandgap enables wavelength engineering for infrared detectors and the lattice parameters permit lattice-matched heterostructures on selected substrates. Its adoption in production remains limited compared to more established ternary alloys (like InGaAs), but the quaternary composition offers theoretical advantages for applications requiring simultaneous optimization of optical absorption range and carrier transport.

infrared detectors and imaginghigh-electron-mobility transistors (HEMT)optoelectronic research deviceslattice-matched heterostructuresquantum well structures

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.250	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.6As0.6Ga0.4P0.4

Electrical Properties

Regulatory Screening

Environmental

Export Control