In0.5As0.5Ga0.5P0.5

semiconductor

· In0.5As0.5Ga0.5P0.5

In0.5As0.5Ga0.5P0.5 is a quaternary III-V semiconductor compound representing a highly engineered alloy of indium, gallium, arsenide, and phosphide. This material is primarily of research and specialized photonic interest, designed to achieve specific lattice-matching and bandgap properties that would be difficult to attain with binary or ternary semiconductors. The composition demonstrates the flexibility of III-V alloy engineering for optoelectronic and high-frequency device applications, though it remains largely experimental rather than a commodity material in production.

optoelectronic devicesphotovoltaic researchhigh-frequency RF/microwave componentslattice-matched heterostructuresintegrated photonicsspace/radiation-hardened electronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.550	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.5As0.5Ga0.5P0.5

Electrical Properties

Regulatory Screening

Environmental

Export Control