In0.4Ga0.6P1

semiconductor

· In0.4Ga0.6P1

In0.4Ga0.6P is a III-V semiconductor compound formed by alloying indium gallium phosphide with a 40:60 indium-to-gallium ratio. This direct-bandgap material sits in the intermediate range of the InGaP family and is primarily used in optoelectronic devices where its bandgap energy corresponds to visible and near-infrared wavelengths. InGaP alloys are widely deployed in high-efficiency photovoltaic cells (especially as top junctions in multijunction solar panels), light-emitting diodes, and heterojunction bipolar transistors, where lattice-matching to GaAs substrates and excellent carrier transport properties make them preferable to wider-bandgap alternatives like GaP.

multijunction solar cellsspace power systemshigh-efficiency photovoltaicsoptoelectronic devicesheterojunction transistorsconcentrated photovoltaics (CPV)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.050	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.4Ga0.6P1

Electrical Properties

Regulatory Screening

Environmental

Export Control