In0.4Ga0.6P

semiconductor

· In0.4Ga0.6P

In₀.₄Ga₀.₆P is a quaternary III-V semiconductor alloy composed of indium, gallium, and phosphorus, engineered to have a direct bandgap in the near-infrared spectral region. This material is primarily used in optoelectronic devices including high-brightness LEDs, laser diodes, and photodetectors, where its bandgap energy and lattice parameters enable efficient light emission and detection in the visible-to-near-IR spectrum. Compared to binary GaP or GaAs, InGaP compositions offer tunable bandgap engineering and superior lattice matching to GaAs substrates, making it the preferred choice for red and amber LEDs, monolithic integrated circuits, and research into high-efficiency photovoltaics.

red and amber LEDslaser diodesoptoelectronic integrated circuitsphotodetectorsvisible light communicationsphotovoltaic research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.050	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.4Ga0.6P

Electrical Properties

Regulatory Screening

Environmental

Export Control