In0.4Ga0.6As0.4P0.6

semiconductor

· In0.4Ga0.6As0.4P0.6

In0.4Ga0.6As0.4P0.6 is a quaternary III-V semiconductor alloy combining indium, gallium, arsenic, and phosphorus in fixed proportions, engineered to achieve specific bandgap and lattice properties intermediate between binary compounds. This material is primarily used in optoelectronic devices and high-speed electronics where lattice matching to InP substrates and bandgap engineering are critical, particularly in integrated photonic circuits, heterojunction devices, and research into efficient light emission or detection in the near-infrared spectrum. The quaternary composition offers superior design flexibility compared to ternary alloys, making it valuable for monolithic integration of multiple functional layers and for applications demanding precise wavelength or carrier transport optimization.

integrated photonic circuitsheterostructure optoelectronicshigh-speed transistorsnear-infrared lasers and LEDsresearch compound semiconductorslattice-matched device layers

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.850	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.4Ga0.6As0.4P0.6

Electrical Properties

Regulatory Screening

Environmental

Export Control