In0.4Al0.6P

semiconductor

· In0.4Al0.6P

In₀.₄Al₀.₆P is a quaternary III-V semiconductor alloy combining indium, aluminum, and phosphorus, belonging to the family of compound semiconductors used in optoelectronic and high-speed electronic devices. This material occupies an intermediate composition in the InAlP system and is primarily studied for lattice-matched heterostructures on GaAs substrates, enabling integration with mature GaAs-based device technology. InAlP is notable for its wide bandgap, excellent lattice matching properties, and transparency in the near-infrared, making it valuable for high-efficiency light-emitting devices, solar cells, and high-electron-mobility transistors where compositional control is critical for performance.

heterojunction light-emitting diodesGaAs-based integrated circuitshigh-efficiency photovoltaic cellsoptoelectronic window layershigh-electron-mobility transistorsresearch-grade compound semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.300	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.4Al0.6P

Electrical Properties

Regulatory Screening

Environmental

Export Control