In0.3P0.3Ga0.7As0.7

semiconductor

· In0.3P0.3Ga0.7As0.7

In0.3P0.3Ga0.7As0.7 is a quaternary III-V compound semiconductor alloy combining indium phosphide and gallium arsenide constituents, engineered for bandgap tuning in the near-infrared to visible spectrum. This material is primarily investigated for optoelectronic applications where lattice-matching to InP or GaAs substrates is critical; it enables direct bandgap emission across a tunable wavelength range without the lattice mismatch penalties that limit ternary alternatives, making it attractive for integrated photonic devices and long-wavelength sources where monolithic integration is essential.

infrared light-emitting diodeslaser diodesphotodetectorsintegrated photonicsfiber-optic communicationsresearch/experimental optoelectronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.670	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.3P0.3Ga0.7As0.7

Electrical Properties

Regulatory Screening

Environmental

Export Control