In0.3Ga0.7P1

semiconductor

· In0.3Ga0.7P1

In0.3Ga0.7P is a III-V direct bandgap semiconductor alloy composed of indium, gallium, and phosphorus, engineered to achieve a bandgap energy in the red-to-infrared spectral region. This material is primarily used in optoelectronic devices such as light-emitting diodes (LEDs) and laser diodes where tunable emission wavelength and efficient radiative recombination are critical; it offers a balance between the higher bandgap of GaP and the lower bandgap of InP, making it valuable for applications requiring specific wavelengths without lattice-matching constraints of homoepitaxy. InGaP alloys are also explored for photovoltaic and heterostructure applications in research settings, where their direct bandgap and relatively mature growth technology (metalorganic chemical vapor deposition) enable integration with other III-V compounds.

LED emitterslaser diodesoptoelectronic wavelength engineeringphotovoltaic researchinfrared light sourcesheterostructure devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.200	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.3Ga0.7P1

Electrical Properties

Regulatory Screening

Environmental

Export Control