In0.3Ga0.7P

semiconductor

· In0.3Ga0.7P

In₀.₃Ga₀.₇P is a III-V semiconductor alloy combining indium, gallium, and phosphorus, engineered for optoelectronic and photovoltaic applications where the bandgap sits between pure GaP and InP. The alloy is widely used in high-efficiency multijunction solar cells (particularly in space and concentrated photovoltaic systems) and as a window layer or intermediate junction material, offering a tailored bandgap that balances light absorption and voltage generation across stacked semiconductor layers. Compared to binary alternatives, this ternary composition enables designers to fine-tune optical and electrical properties for lattice-matched or near-lattice-matched device architectures, making it essential in advanced power conversion systems where efficiency and radiation tolerance are critical.

multijunction solar cellsspace power systemsconcentrated photovoltaicsepitaxial window layershigh-efficiency photovoltaic devicesradiation-hardened semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.200	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.3Ga0.7P

Electrical Properties

Regulatory Screening

Environmental

Export Control